───     2024 PAPERS     ───

1. Investigation of annealing temperature dependent sub-cycling behavior for HfZrOx-based ferroelectric capacitor

Yu-Cheng Kao, Hao-Kai Peng, Sheng-Wei Hsiao, Kuo-An Wu, Chia-Ming Liu, Sheng-Yen Zheng, Yung-Hsien Wu* and Pin-Jiun Wu*

APL Mater, vol. 12, no. 5, p. 051118, 2024.

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2. Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer

Yi-Fan Chen, Hung-Yuan Shih, Chen-Hsin Wang, Chun-Yi Kuo, and Yung-Hsien Wu* 

Appl. Phys. Lett., vol. 124, no. 16, p. 162903, 2024.

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3. Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

Hao-Kai Peng, Sheng-Yen Zheng, Wei-Ning Kao, Ting-Chieh Lai, Kai-Sheun Lee and Yung-Hsien Wu*

Applied Surface Science, vol. 645, p.158788, 2024.

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4. Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN

Yi-Fan Chen, Chen-Hsin Wang, Hung-Yuan Shih, Chun-Yi Kuo and Yung-Hsien Wu*

IEEE Trans. on electron device, vol. 71, no. 5, pp. 3433-3438, 2024.

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5. Ge n-Channel Hybrid Memory Based on Ferroelectric Charge Trapping Layer With Low Operating Voltage, Large Memory

    Window, and Negligible Read Latency

Yi-Fan Chen, Kai-Yang Huang, Chun-Yi Kuo and Yung-Hsien Wu*

IEEE Electron Device Letters, vol. 45, no. 10, pp. 1784-1787, 2024.

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