─── 2019 PAPERS ───
1. Investigation of Capping Layer on Characteristics of Poly-GeSn Junctionless p-Channel Thin Film Transistors
Chuan-Pu Chou, Yan-Xiao Lin, Kuan-Yin Hsieh, and Yung-Hsien Wu*
ECS Journal of Solid State Science and Technology, vol. 8, no. 11, pp. 647-651, 2019.
2. Ionizing Radiation Effect on Memory Characteristics for HfO2-Based Ferroelectric Field-Effect Transistors
Kuen-Yi Chen, Yi-Shan Tsai, and Yung-Hsien Wu*
IEEE Electron Device Lett., vol. 40, no. 9, pp. 1370-1373, 2019.
3. Poly-GeSn junctionless P-TFTs featuring a record high ION/IOFF ratio and hole mobility by defect engineering
Chuan-Pu Chou, Yan-Xiao Lin, Kuan-Ying Hsieh and Yung-Hsien Wu*
The Royal Society of Chemistry, vol. 7, pp. 5201-5208, 2019.
4. Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors
Y. L. Chen, G. L. Liou, H. H. Hsu, P. C. Chen, Z. W. Zheng, Y. H. Wu, C. H. Cheng, C. H. Liu, and L. H. Chung
Journal of Nanoscience and Nanotechnology, vol. 19, pp. 5619–5623, 2019
5. Inkjet-printed vertical interconnects for ultrathin system-on-package technology
Cheng-Lin Cho, Hsuan-ling Kao, Li-Chun Chang, Yung-Hsien Wu, Hsien-Chin Chiu
Surface & Coatings Technology, vol. 359, pp. 85–89, 2019.
6. Enhanced Reliability of Ferroelectric HfZrOx on Semiconductor by Using Epitaxial SiGe as Substrate
Kuen-Yi Chen, Yan-Hua Huang, Ruei-Wen Kao, Yan-Xiao Lin, Kuan-Ying Hsieh, and Yung-Hsien Wu*
IEEE Trans. on Electron Devices, vol. 66, no. 8, pp. 3636-3639, 2019.
7. Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrOx
Kuen-Yi Chen, Teng-Chuan Chen, Ruei-Wen Kao, Yan-Xiao Lin, Kuan-Ying Hsieh, and Yung-Hsien Wu*
IEEE Trans. on Nanotechnology, vol. 18, pp. 532-535, 2019.
8. Design and Simulation of Improved Swing and Ambipolar Effect for Tunnel FET by Band Engineering Using Metal Silicide at Drain Side
Shih-Chieh Teng, Yen-So Su, and Yung-Hsien Wu*
IEEE Trans. on Nanotechnology, vol. 18, pp. 274-278, 2019.
─── 2019 CONFERENCE ───
1. Dependence of Reliability of Ferroelectric HfZrOx Thin Film on Poly- and Single Crystalline-GeSn by solid phase epitaxy on Si(100) and Si(111) Wafer
Chuan-Pu Chou, Yan-Xiao Lin, Yu-Kai Huang, Chih-Yu Chan, and Yung-Hsien Wu*
in IEEE Semiconductor Interface Specialists Conference, 2019
2. Reliability of Poly-GeSn based Ferroelectric Devices on Flexible Substrate
Yu-Kai Huang, Chuan-Pu Chou, Yan-Xiao Lin, Chih-Yu Chan, and Yung-Hsien Wu*
in IEEE Semiconductor Interface Specialists Conference, 2019
3. Study of Co60 Gamma-ray Radiation Effect on HfZrOx-based FeFET Memory Performance
Chi-Yu Chan, Kuen-Yi Chen, Chuan-Pu Chou, Yan-Xiao Lin, Yu-Kai Huang, and Yung-Hsien Wu*
in IEEE Semiconductor Interface Specialists Conference, 2019
