─── 2012 PAPERS ───
1. MIM Capacitors With Crystalline-TiO2/SiO2 Stack Featuring High Capacitance Density and Low Voltage Coefficient
Yung-Hsien Wu*, Wei-Yuan Ou, Chia-Chun Lin, Jia-Rong Wu, Min-Lin Wu, and Lun-Lun Chen
IEEE Electron Device Lett., vol. 3, no. 1, pp. 104-106, 2012.
2. Formation of SiGe Nanocrystals Embedded in Al2O3 for The Application of Write-Once-Read-Many-Times Memory
Min-Lin Wu, Yung-Hsien Wu*, Chia-Chun Lin, and Lun-Lun Chen
Appl. Phys. Lett., vol. 101, p.163503, 2012.
3. Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline-TiO2/SiO2 Stacked Insulator
Jia-Rong Wu, Yung-Hsien Wu*, Chia-Chun Lin, Wei-Yuan Ou, Min-Lin Wu, and Lun-Lun Chen
IEEE Electron Device Lett., vol. 33, no. 6, pp. 878-880, 2012.
4. ZrTiOx-Based Resistive Memory With MIS Structure Formed on Ge Layer
Yung-Hsien Wu*, Jia-Rong Wu, Chin-Yao Hou, Chia-Chun Lin, Min-Lin Wu, and Lun-Lun Chen
IEEE Electron Device Lett., vol. 33, no.3, pp. 435-437, 2012.
5. ZrLaOx/ZrTiOx/ZrLaOx Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect
Lun Lun Chen, Yung-Hsien Wu*, Yu-Bo Lin, Chia-Chun Lin, and Min-Lin Wu
IEEE Electron Device Lett., vol. 33, no.10, pp. 1447-1449, 2012.
6. Highly Uniform Low-Power Resistive Memory Using Nitrogen-Doped Tantalum Pentoxide
C.H. Cheng, P.C. Chen, Y. H. Wu, M.J. Wu, F.S. Yeh,and Albert Chin
Solid State Electronics, vol. 73, pp. 60–63, 2012.
7. MOS Devices With High-κ (ZrO2)x(La2O3)1−x Alloy as Gate Dielectric Formed by Depositing ZrO2/La2O3/ZrO2 Laminate and Annealing
Yung-Hsien Wu*, Lun-Lun Chen, Rong-Jhe Lyu, Jia-Rong Wu, Min-Lin Wu, and Chia-Chun Lin
IEEE Transactions on Nanotecnology, vol. 11, no. 3, pp. 483–491, 2012.
8. Integration of Amorphous Yb2O3 and Crystalline ZrTiO4 as Gate Stack for Aggressively Scaled MOS Devices
Yung-Hsien Wu*, Rong-Jhe Lyu, Min-Lin Wu, Lun-Lun Chen, and Chia-Chun Lin
IEEE Electron Device Lett., vol. 33, no. 3, pp. 426–428, 2012.
─── 2012 CONFERENCE ───
1.Flash Memory with Germanium Nitride Formed by Nitridation of Germanium as Charge Trapping Layer
Chia-Chun Lin, Yuan-Sheng Lin, Min-Lin Wu, Lun-Lun Chen, and Yung-Hsien Wu*
In European Materials Research Society (E-MRS), Warsaw, Poland, 2012.
2.Surface passivation of Ge by YGeOx formed by thermal oxidation of Y/Ge structure
Min-Lin Wu, Rong-Jhe Lyu, Chun-Yen Chao, Lun-Lun Chen, Chia-Chun Lin, and Yung-Hsien Wu*
In European Materials Research Society (E-MRS), Warsaw, Poland, 2012.
3.MIM Capacitors with High Capacitance Density and Low Quadratic Voltage Coefficient Employing Canceling Effect by ZrLaOx/ZrTiOx/ZrLaOx Laminate Insulator
Lun-Lun Chen, Yu-Bo Lin, Chia-Chun Lin, You-Tai Chang, and Yung-Hsien Wu*
In International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, 2012.
