─── 2013 PAPERS ───
1. Improved Leakage and Reliability for ZrLaOx/ZrTiOx/ZrLaOx-Based MIM Capacitors by Plasma Nitridation
Chia-Chun Lin, Yung-Hsien Wu*, Ren-Siang Jiang, Yu-Bo Lin, Meng-Ting Yu, and Cherng-En Sun
IEEE Electron Device Lett., vol. 34, no.7, pp. 915-917, 2013.
2. MIM Capacitors Based on ZrTiOx/BaZryTi1−yO3 Featuring Record-Low VCC and Excellent Reliability
Chia-Chun Lin, Yung-Hsien Wu*, Ren-Siang Jiang, and Meng-Ting Yu
IEEE Electron Device Lett., vol. 34, no. 11, pp. 1418-1420, 2013.
3. On the Bipolar Resistive Switching Memory Using TiN/Hf/HfO2/Si MIS Structure
Yung-Hsien Wu*, Dirk J Wouters, Paul Hendrickx, Leqi Zhang, Yang Yin Chen, Ludovic Goux, Andrea Fantini, Guido Groeseneken, and Malgorzata Jurczak
IEEE Electron Device Lett., vol. 34, no. 3, pp. 414-416, 2013.
4. One-Time Programmable Memory Based on ZrTiOx Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption
Chia-Chun Lin and Yung-Hsien Wu*
IEEE Electron Device Lett., vol. 34, no. 12, pp. 1518-1520, 2013.
5. High quality Ge surface passivation layer formed by thrmal oxidation of Y/Ge structure
Min-Lin Wu, Yung-Hsien Wu*, Rong-Jhe Lyu, Chun-Yen Chao, Chao-Yi Wu, Chia-Chun Lin,and Lun-Lun Chen
Microelectronic Engineering, vol. 109, pp. 216–219, 2013.
6. Crystalline ZrTiO4-Gated Ge Metal–Oxide–Semiconductor Devices With Amorphous Yb2O3 as a Passivation Layer
Min-Lin Wu, Yung-Hsien Wu*, Chun-Yen Chao, Chia-Chun Lin, and Chao-Yi Wu
IEEE Transactions on Nanotechnology, vol. 12, no. 6, pp. 1018-1021, 2013.
7. Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer
Chia-Chun Lin, Yung-Hsien Wu*, Yuan-Sheng Lin, Min-Lin Wu, and Lun-Lun Chen
IEEE Transactions on Nanotechnology, vol. 12, no. 3, pp. 436-441, 2013.
8. Impact of Dielectric Crystallinity on The Resistive Switching Characteristics of ZrTiOx-Based Metal–Insulator-Metal Devices
Chia-Chun Lin, Yung-Hsien Wu*, Tung-Hsuan Hung,and Chin-Yao Hou
Microelectronic Engineering, vol. 109, pp. 374–377, 2013.
─── 2013 CONFERENCE ───
1.Crystalline High-k Dielectrics for Nano Devices
Yung-Hsien Wu*
2013 Energy Materials Nanotechnology East Meeting, Beiging, 2013.
2.Impact of Plasma Nitridation on Reliability Performance of MIM Capacitors Based on ZrLaOx/ZrTiOx/ZrLaOx Laminate Insulator
Chia-Chun Lin, Ren-Siang Jiang, Yu-Bo Lin, Meng-Ting Yu, Chern-En Sun, and Yung-Hsien Wu*
In International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, 2013.
