───     2022 PAPERS     ───

1. Toward Highly Pure Ferroelectric Hf1−xZrxO2 Thin Films by Tailoring the Strain in an Unstable Thermodynamic System

Yu-Cheng Kao, Hao-Kai Peng, Yu-Kai Wang, Kuo-An Wu, Chiao-Yen Wang, Yi-Dong Lin, Ting-Chieh Lai, Yung-Hsien Wu, Chiung-Yuan Lin, Sheng-Wei Hsiao, Ming-Hsien Lee, and Pin-Jiun Wu*

ACS Appl. Electron. Mater, vol. 4, no. 8, pp. 3897-3908, 2022

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2. Enhanced Tunneling Electro-Resistance Ratio for Ferroelectric Tunnel Junctions by Engineering Metal Work Function

Yi-Fan Chen , Lee-Wen Hsu, Chia-Wei Hu, Guan-Ting Lai, and Yung-Hsien Wu*

IEEE Electron Device Letters, vol. 43, no. 2, pp. 208-211, 2022.

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3. Improved Immunity to Sub-Cycling Induced Instability for Triple-Level Cell Ferroelectric FET Memory by Depositing      

    HfZrOx on NH3 Plasma-Treated Si

Hao-Kai Peng, Chia-Ming Liu, Yu-Cheng Kao, Pin-Jiun Wu, and Yung-Hsien Wu*

IEEE Electron Device Letters, vol. 43, no. 8, pp. 1219-1222, 2022.

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4. Improved Reliability and Read Latency Under Radiation Observed in HfZrOx Based p-FeFETs With AlON Interfacial Layer

Hao-Kai Peng, Ting-Chieh Lai, Tien-Hong Kao, and Yung-Hsien Wu*

IEEE Electron Device Letters, vol. 43, no. 3, pp. 494-497, 2022.

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5. Enhanced Reliability, Switching Speed and Uniformity for Ferroelectric HfZrOx on Epitaxial Ge Film by Post Deposition

    Annealing for Oxygen Vacancy Control

Hao-Kai Peng, Cheng-Yuan Chiu, Yu-Cheng Kao, Pin-Jiun Wu, and Yung-Hsien Wu*

IEEE Trans. on electron device, vol. 69, no. 7, pp. 4002-4009, 2022.

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