─── 2017 PAPERS ───
1. Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile
Chuan-Pu Chou, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, Jia-Hong Huang, and Yung-Hsien Wu*
IEEE Electron Device Lett.,vol. 38, no. 3, pp. 299-302, 2017.
2. Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment
Po-Chun Chen, Yu-Chien Chiu, Guan-Lin Liou, Zhi-Wei Zheng, Chun-Hu Cheng, and Yung-Hsien Wu
IEEE Electron Device Lett.,vol. 38, no. 2, pp. 210-212, 2017.
3. Improved Leakage Current and Device Uniformity for Sub-20 nm N-FinFETs by Cryogenic Ge Pre-amorphization Implant in Contact
Chuan-Pu Chou, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, and Yung-Hsien Wu*
Microelectronic Engineering, vol. 178, pp. 137–140, 2017.
4. Flash Memory Featuring LowVoltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer
Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, Teng-Chuan Chen, and Yung-Hsien Wu*
Sci. Rep., vol. 7, no. March, pp. 43659, 2017.
5. Influence of Plasma Fluorination on P-Type Channel Tin-Oxide Thin Film Transistors
Po-Chun Chen, Yu-Chien Chiu, Zhi-Wei Zheng, Chun-Hu Cheng, Yung-Hsien Wu*
Journal of Alloys and Compounds, vol. 707, pp. 162-166, 2017
6. Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles Calculation
Y. C. Chiu, P. C. Chen, S. L. Chang, Z. W. Zheng, C. H. Cheng, G. L. Liou, H. L. Kao, Y. H. Wu*, and C. Y. Chang,
ECS Journal of Solid State Science and Technology, vol. 6, no. 4, pp. Q53-Q57, 2017.
─── 2017 CONFERENCE ───
1. Excellent Reliability of Ferroelectric HfZrOx Free from Wake-Up and Fatigue Effects by NH3 Plasma Treatment
Kuen-Yi Chen, Pin-Hsuan Chen, and Yung-Hsien Wu*
In Symposium on VLSI Technology, Kyoto, Japan, 2017.
由國際電機電子工程師學會(Institute of Electrical and Electronics Engineers，IEEE)電子元件學會(Electron Devices Society)與日本應用物理學會(Japan Society of Applied Physics)主辦的Symposium on VLSI Technology是半導體領域的頂尖國際會議，被視為積體電路技術與先進半導體元件開發的指標，與會者包含世界知名大學學者 與國際半導體大廠的研究人員。
包括陳坤意同學、陳品璇同學在內的研究團隊成員共同開發以電漿處理提升鐵電材質可靠度的創新製 程，有效克服了鐵電材質於反覆操作下的喚醒與疲乏效應，有助於新一代電晶體與記憶體的開發，研究成果將安排於會議的 Joint Circuit and Technology Focus Session發表。
2. Thickness Dependent Ferroelectric Behaviors for Zr-Doped HfO2
Ruei-Wen Kao, Kuen-Yi Chen, Pin-Husan Chen, and Yung-Hsien Wu*
In Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Germany, 2017
3. Improved Leakage Current and Device Uniformity for Sub-20 nm N-FinFETsby Cryogenic Ge Pre-Amorphization Implant in Contact
Chuan-Pu Chou, Chin-Yu Chen, Kuen-Yi Chen, Shih-Chieh Teng, and Yung-HsienWu*
In Conference on Insulating Films on Semiconductors (INFOS), Potsdam, Germany, 2017
