─── 2011 PAPERS ───
1. High-Performance Metal-Insulator-Metal Capacitor With Ge-Stabilized Tetragonal ZrO2/Amorphous La-doped ZrO2 Dielectric
Yung-Hsien Wu*, Chia-Chun Lin, Lun-Lun Chen, Yao-Chung Hu, Jia-Rong Wu, and Min-Lin Wu
Appl. Phys. Lett., vol. 98, p. 013506, 2011.
2. Ge-Based Nonvolatile Memory Formed on Si Substrate With Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer
Yung-Hsien Wu*, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen, and Chia-Chun Lin
Journal of The Electrochemical Society, vol. 158, no.4, pp. H410-H416, 2011.
3. MOS Devices with Tetragonal ZrO2 as Gate Dielectric Formed by Annealing ZrO2/Ge/ZrO2 Laminate
Yung-Hsien Wu*, Lun-Lun Chen, Wei-Chia Chen, Chia-Chun Lin, Min-Lin Wu, and Jia-Rong Wu
Microelectronics Engineering, vol. 88, pp. 1361-1364, 2011.
4. Comparison of Ge Surface Passivation Between SnGeOx Films Formed by Oxidation of Sn/Ge and SnGex/Ge Structures
Yung-Hsien Wu*, Min-Lin Wu, Rong-Jhe Lyu, Jia-Rong Wu, Chia-Chun Lin, and Lun-Lun Chen
IEEE Electron Device Lett., vol. 32, no. 5, pp. 611-613, 2011.
5. Crystalline ZrO2-Gated Ge Metal-Oxide-Semiconductor Capacitors Fabricated on Si Substrate With Y2O3 as Passivation Layer
Yung-Hsien Wu*, Min-Lin Wu, Rong-Jhe Lyu, Jia-Rong Wu, Lun-Lun Chen, and Chia-Chun Lin
Appl. Phys. Lett., vol. 98, p. 203502, 2011.
6. High-Performance Metal-Insulator-Metal Capacitor Using Stacked TiO2/Y2O3 as Insulator
Yung-Hsien Wu*, Chia-Chun Lin, Yao-Chung Hu, Min-Lin Wu, Jia-Rong Wu, and Lun-Lun Chen
IEEE Electron Device Lett., vol. 32, no.8, pp. 1107-1109, 2011.
7. Impact of Fluorine Treatment on Fermi Level Depinning for Metal/Germanium Schottky Junctions
Yung-Hsien Wu*, Jia-Rong Wu, Chin-Yao Hou, Min-Lin Wu, Chia-Chun Lin, and Lun-Lun Chen
Appl. Phys. Lett., vol. 99, p. 253504, 2011.
8. Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, and A. Chin
IEEE Electron Device Lett., vol. 32, no.12, pp. 1749-1751, 2011.
─── 2011 CONFERENCE ───
1.Resistive Switching Properties for ReRAM With Pt/Ti/ZrTiOx/Ge Structure Formed on Si Substrate
Jia-Rong Wu, Chia-Chun Lin, Chin-Yao Hou, Min-Lin Wu, Lun-Lun Chen, and Yung-Hsien Wu*
In Subthreshold Microelectronics Conference, Lexington, MA, USA, 2011.
2.ReRAM With Pt/Ti/ZrTiOx/Pt Structure Featuring Low-Voltage and High-Speed Operation
Chia-Chun Lin, Jia-Rong Wu, Chin-Yao Hou, Min-Lin Wu, Lun-Lun Chen, and Yung-Hsien Wu*
In Subthreshold Microelectronics Conference, Lexington, MA, USA, 2011.
3.Fermi Level Depinning for Metal/Germanium Schottky Junction by CF4 Plasma Treatment
Jia-Rong Wu, Chin-Yao Hou, Min-Lin Wu, Chia-Chun Lin, and Lun-Lun Chen, and Yung-Hsien Wu*
In International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, 2011.
4.MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient by Employing Crystalline-TiO2/SiO2 Stacked Dielectric
Chia-Chun Lin, Wei-Yuan Ou, Jia-Rong Wu, Min-Lin Wu, Lun-Lun Chen, and Yung-Hsien Wu*
In International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, 2011.
5.MOS Devices With Tetragonal ZrO2 as Gate Dielectric Formed by Annealing ZrO2/Ge/ZrO2 Laminate
Yung-Hsien Wu*, Lun-Lun Chen, Wei-Chia Chen, Chia-Chun Lin, Min-Lin Wu, and Jia-Rong Wu
In Conference on Insulating Films on Semiconductors, Grenoble, France, 2011.
