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───     2025 PAPERS     ───

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1. Enhancing FeFET Memory Reliability via Switching Mechanism Control by Compositionally Gradient-Stacked Hf1-xZrxO2 Films
Sheng-Yen Zheng, Wei-Ning Kao and Yung-Hsien Wu*
IEEE Electron Device Letters, Vol. 46, no. 5, pp. 737 – 740, 2025.

2. Enhancing Ferroelectricity of HfZrOₓ-Based Ferroelectric Capacitors by Quenching With Liquid Nitrogen
Chun-Yi Kuo, Kai-Sheun Lee, Yi-Fan Chen and Yung-Hsien Wu* 
IEEE Trans. on electron device, vol. 72, no. 4, pp. 1769 - 1773, 2025.

3. Ge N-Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing
Sheng-Yen Zheng, Wei-Ning Kao and Yung-Hsien Wu*
Adv. Electron. Mater. 2025, 11, 2400841.

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