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───     2023 PAPERS     ───

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1. Investigation of Radiation Effect on Ge P-Channel Ferroelectric FET Memory
Hao-Kai Peng, Jian-Zhi Chen, Kai-Sheun Lee, Kai-Yang Huang and Yung-Hsien Wu*
IEEE Electron Device Letters, vol. 44, no. 6, pp. 927-930, 2023.

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2. Multilevel Cell Ferroelectric HfZrO2 FinFET With High Speed and Large Memory Window Using AlON Interfacial Layer
Xin-Chan Zhong, Chih-Siang Chang, Hao-Kai Peng, Siao-Cheng Yan, Chen-Han Wu, Chong-Jhe Sun, Yung-Hsien Wu* and Yung-Chun Wu*
IEEE Electron Device Letters, vol. 44, no. 1, pp. 44-47, 2023.

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3. Wake-Up Free Ferroelectric Capacitor With Quadruple-Level Storage by Inserting ZrO2 Interlayer and Bottom Layer in
    HfZrOx
Yi-Fan Chen, Chia-Wei Hu, Yu-Cheng Kao, Chun-Yi Kuo, Pin-Jiun Wu and Yung-Hsien Wu*
IEEE Electron Device Letters, vol. 44, no. 3, pp. 400-403, 2023.

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4. Improving Polarization and Reliability of Ferroelectric Capacitors via ALD Metal Interface Engineering
Yi-Fan Chen, Chen-Hsin Wang, Hung-Yuan Shih, Chun-Yi Kuo and Yung-Hsien Wu*
International Electron Devices & Materials Symposium

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5. Dependence of Zr Content of HfZrOx-Based FeFET Memory on Radiation Resistance to Proton Irradiation
Sheng-Yen Zheng, Hao-Kai Peng, Wei-Ning Kao, Ting-Chieh Lai, Kai-Sheun Lee and Yung-Hsien Wu*
International Electron Devices & Materials Symposium

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6. Introducing TiN Interlayer for Ferroelectric Capacitors to Implement Triple Level Cell Storage Capability at Low
   Operating Voltage
Yi-Fan Chen, Hung-Yuan Shih, Chen-Hsin Wang, Chun-Yi Kuo and Yung-Hsien Wu*
International Electron Devices & Materials Symposium

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7. Enhanced Ferroelectricity of HfZrOx-based Ferroelectric Capacitors by Quenching with Liquid Nitrogen
Chun-Yi Kuo, Kai-Sheun Lee, Yi-Fan Chen, and Yung-Hsien Wu*
Solid State Devices and Materials,  pp. 657-658, 2023.

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